Presentation Information

[NC-2-01]Operando Nanobeam X-ray Diffraction Analysis of strain in AlGaN/GaN HEMTs with 10-µm gate

*Jumpei Yamamoto1, Tetsuya Tohei1, Yasuhiko Imai2, Zhuo Diao1, Kazushi Sumitani2, Shigeru Kimura2, Ryota Ochi3, Taketomo Sato3, Tamotsu Hashizume4, Akira Sakai1 (1. Graduate School of Engineering Science, The University of Osaka, 2. Japan Synchrotron Radiation Research Institute, 3. Research Center For Integrated Quantum Electronics (RCIQE), Hokkaido University, 4. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University)