Session Details

[NNS-002]Novel Nitride Semiconductors and their Functional Revolution 2

Sat. Dec 13, 2025 10:45 AM - 11:45 AM JST
Sat. Dec 13, 2025 1:45 AM - 2:45 AM UTC
ES Hall(ES Building)

[NNS-2-01]Advancing GaN HEMTs with AlScN, AlBN, and AlYN Barriers for High Performance Applications (Tentative)

Kazuki Nomoto (Cornell University, U.S.A)

[NNS-2-02]First-Principles Analysis of the Electronic States at Nb2N/AlN Interfaces

*Takahiro Kawamura1, Toru Akiyama1, Atsushi Kobayashi2 (1. Graduate School of Engineering, Mie University, 2. Faculty of Advanced Engineering, Tokyo University of Science)