Poster Session 2

2:00 PM - 4:45 PM JST(5:00 AM - 7:45 AM UTC)

[52028] Low-temperature deposition of SiC using vinylsilane assisted by an ion beam

*Wakana Takeuchi¹, Koki Ono², Takayoshi Tsutsumi², Kenji Ishikawa², Kenichi Uehara^3,4, Shigeo Yasuhara³, Masaru Hori², Hiromasa Tanaka² (1. Aichi Institute of Technology (Japan), 2. Nagoya University (Japan), 3. Japan Advanced Chemicals Ltd. (Japan), 4. Tohoku University (Japan))