[Mo-P2-F] Quantum Color Centers in Semiconductors

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[Mo-P2-F-04] Ab Initio Study of Vacancy-related Defects in β-Ga₂O₃ for Quantum Applications

〇Ryota Yamada¹, Sosuke Iwamoto¹, Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1. Graduate School of Engineering, The Univ. of Osaka (Japan))

We screened vacancy-related defects in β-Ga₂O₃ for solid state spin defects using ab initio calculations. Our calculations revealed that a negatively-charged C_O1V_Ga1 has potential for quantum applications owing to its high-spin ground state and short radiative lifetime.