[Mo-P2-H] Optical properties of nitride emitters

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[Mo-P2-H-03] Super-Resolved Imaging of Charge Transport near V-Defects in Operational Green-Emitting III-Nitride LEDs

Christian Roubert^1,2,3,4, Tanay Tak^5,6, Léonard Schué^1,2,3,4, Yves Lassailly^1,2,3,4, James S Speck^5,6, Claude Weisbuch^1,2,3,4,5,6, Jacques Peretti^1,2,3,4, 〇Alistair C. H. Rowe^1,2,3,4 (1. Inst. Polytechnique de Paris (France), 2. Ecole Polytechnique (France), 3. Lab. de Physique de la Matière Condensée (France), 4. CNRS (France), 5. Univ. of California, Santa Barbara (USA), 6. Materials Department (USA))

A super-resolved hyperspectral luminescence imaging technique is used to image charge transport between V-defects in operational, green-emitting LEDs. The method allows for operando measurements of the charge transport length as a function of the injected current.