[Mo-P2-H] Optical properties of nitride emitters

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[Mo-P2-H-04] Local Probe Evidence for Improved Electrical Efficiency at V-defects in Green-Emitting III-Nitride Light-Emitting Diodes

Camille Fornos¹, Tanay Tak², Wan Ying Ho², James S Speck², Claude Weisbuch^1,2, Natalia Alyabyeva¹, Jacques Peretti¹, 〇Alistair Rowe¹ (1. CNRS/Ecole Polytechnique (France), 2. University of California, Santa Barbara (USA))

The tip of a scanning tunneling microscope is used to locally inject holes into the p-type side of green-emitting III-N light-emitting diode (LED) containing V-defects. The forward bias necessary to inject charge is 1 V lower on V-defect facets than on the LED's c-planes. This is the origin of record efficiencies in such LEDs.