Presentation Information

[Th-A1-D-04]Tunability Unraveled for Elastic Properties of Cubic Silicon Carbide Thin Film Compound Semiconductor

Behzad Jazizadeh1, 〇Maksym Myronov1 (1. University of Warwick (UK))
Critical mechanical parameters Young’s modulus, Poisson’s ratio, residual stress and lattice strain were tuned by controlling of carbon and silicon precursors during epitaxial growth of cubic silicon carbide on silicon (3C–SiC/Si), offering pathway to tailor elastic properties in heteroepitaxial semiconductors for advanced applications.