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[Th-A1-E-02]Growth and Characterization of the Quantum Anomalous Hall Insulator V-doped (Bi, Sb)2Te3 on ZnTe

〇Yusuke Nakazawa1, Takafumi Akiho1, Kiyoshi Kanisawa1, Hiroshi Irie1, Franz Fischer1, Norio Kumada1, Koji Muraki1 (1. Basic Research Laboratories, NTT, Inc. (Japan))
Toward topological-insulator heterostructures, we grow and characterize the quantum anomalous Hall (QAH) insulator V-doped (Bi,Sb)2Te3 (VBST) on migration-enhanced-epitaxy grown ZnTe. The VBST film exhibits the QAH effect at a higher observation temperature than VBST grown directly on InP substrates.