Presentation Information
[Th-A1-E-03]Magnetic Proximity-Induced Anomalous and Topological Hall Effects in CrGeTe3/BiSbTeSe2 Heterostructures
〇Chen Ma1, Hui Li2, Yunwei Sheng1, Chengjie Zhou1, Jiannong Wang1 (1. Physics Department, The Hong Kong Univ. of Sci. and Tech. (Hong Kong), 2. National Key Lab. of Optoelectronic Info. Acquisition and Protection Tech. and Inst. of Physical Sci. and Info. Tech., Anhui Univ. (China))
We investigate magnetotransport in CrGeTe3/BiSbTeSe2 Heterostructures. Magnetic proximity effect induces two interesting phenomena: an anomalous Hall effect with polarity tunable by gate voltage and temperature, and a topological Hall effect. These findings establish this system as a valuable platform for studying magnetic proximity effect.