[Th-P] Semiconductor hybrid systems and novel devices

[Th-P-116] Doping Engineering of Double-SOI Structures for Two-Channel Tunneling Transistors

〇Yu Cheng¹, Giulio Galderisi², Ulrich Wulf^1,3, Christian Matthus⁴, Maciej Wiatr⁵, Jens Trommer², Shengqiang Zhou¹ (1. Helmholtz-Zentrum Dresden-Rossendorf (HZDR) (Germany), 2. Namlab gGmbH (Germany), 3. Brandenburg University of Technology Cottbus-Senftenberg (Germany), 4. Faculty of Electrical and Computer Engineering, Technische Universität Dresden (Germany), 5. Wiatec® GmbH (Germany))

In this work, we propose a field-effect nanotransistor based on lateral resonant tunneling between two parallel conduction channels. By applying room and elevated temperatures during implantation, we demonstrate defect-free, highly doped S/D regions in those thin Si layers.