[Th-P] Semiconductor hybrid systems and novel devices

[Th-P-118] Asymmetric Double-Gate Ferroelectric Field Effec Transistor for Analog Compute-In-Memory

Kyungsoo Park¹, Hyeoncheol Jeong¹, Jihoon Choi¹, Taesuk Kim¹, Yeonwoo Choi¹, Jinyeong Lee¹, 〇Changhwan Choi¹ (1. Hanyang University (Korea))

We demonstrate novel device structure of asymmetric double-gate (ADG) FeFETs with ultrathin HZO (<3.5nm), attaining a wide memory window (MW) of 1.3 V at a operating voltage of 1.8 V. In addition, 3.4× larger MW compared to conventional single-gate FeFETs and demonstrates superior reliability are attained