[Th-P] 2D matrials

[Th-P-23] Strain-Dependent Band Alignment and Fermi-Level Pinning at Metal-MoS2 Contacts

〇XINBIAO WANG¹, Euyheon Hwang¹ (1. Sungkyunkwan Univ. (Korea))

We present a first-principles study of strained metal/monolayer-MoS2 contacts. Vacuum-referenced band alignment reveals that all interfaces remain n-type Schottky contacts from −3% to +3% strain, while interfacial dipoles and Fermi-level pinning constrain the ideal barrier reduction.