[Th-P] Emerging Materials and Nanoscale Devices

[Th-P-50] InAs Quantum Wells Grown via Interfacial Misfit Buffer Layer on Semi-insulating GaAs Substrates

〇Takafumi Akiho¹, Yusuke Nakazawa¹, Hiroshi Irie¹, Norio Kumada¹, Koji Muraki¹ (1. NTT BRL (Japan))

We demonstrate high-mobility InAs quantum wells on semi-insulating GaAs using an interfacial misfit (IMF) buffer. The IMF buffer may reduce dislocation density, resulting in higher mobility and well-resolved Shubnikov–de Haas oscillations at lower magnetic fields.