[Th-P] Emerging Materials and Nanoscale Devices

[Th-P-53] Temperature Dependence of the Relaxation Mechanisms in Strongly Coupled Si-Doped Semiconductor Superlattices

〇Nagi Maeda¹, Naomi Nagai¹, Kazuyuki Kuroyama¹, Kazuhiko Hirakawa¹ (1. Inst. of Indus. Sci., The Univ. of Tokyo (Japan))

In this work, we investigated how electron scattering depends on the structural parameters of superlattices by analyzing current density-voltage characteristics at various temperatures. As a result, we observed a clear temperature dependence in superlattice relaxation mechanisms.