[Th-P] Emerging Materials and Nanoscale Devices

[Th-P-56] First-principles study of dielectric function of stressed silicon thin films

〇Toshiaki Hayashi¹, Yasushi Shinohara¹, Hiroyuki Kageshima², Jinichiro Noborisaka¹, Katsuhiko Nishiguchi³, Gento Yamahata¹ (1. Basic Res. Lab., NTT, Inc. (Japan), 2. Shimane Univ. (Japan), 3. Yokohama National Univ. (Japan))

We have calculated the dielectric function for an unstressed Si slab, stressed Si slab and bulk Si and found that the confinment-enabled transition is strongly enhanced under stress, in qualitative agreement with the experimentally observed optical transitions.