[Th-P] Emerging Materials and Nanoscale Devices

[Th-P-57] Donor Binding Energies In Silicon-On-Insulator Structures:A New Look

〇Rubens Quirino M Filho¹, Belita Koiller¹, Maria Jose Calderon², Marco Fanciulli³ (1. Univ. Federal do Rio de Janeiro (Brazil), 2. Inst. de Ciencia de Materiales de Madrid (Spain), 3. Univ. of Torino (Italy))

We investigate changes in donors' electronic behavior in SOI heterostructures as a function of the Si slab width and donor concentration. Experimental data combined with effective mass theory provide a unified phase diagram of the possible scenarios.