[Th-P] Emerging Materials and Nanoscale Devices

[Th-P-62] Wurtzite MnSe as a Barrier for CdSe Quantum Wells with Built-in Electric Field

〇Michał Jakub Grzybowski¹, Wojciech Pacuski¹, Jan Suffczyński¹ (1. Univ. of Warsaw (Poland))

Herein, we present an unconventional system with CdSe quantum well embedded between (Cd,Mg)Se and MnSe barriers. All materials share wurtzite crystal structure, which is uncommon for epitaxial MnSe layers. We observe the presence of 14 MV/m internal electric field in the structure.