Presentation Information
[Th-P-64]High-Purity s-SWCNT Networks for Advanced Nanoscale Electronic Devices
〇Beomsu Jo1, Beomjoon Jung1, Sunghyeon Cha1, Young Lae Kim1 (1. Kangwon National University (Korea))
We demonstrate a CMOS-compatible fabrication strategy for the scalable integration of high-purity s-SWCNTs. Through photolithography and APTES-assisted assembly, we achieved highly dense s-SWCNT networks that serve as robust platforms for high-performance nanoscale electronic devices.
