Presentation Information
[We-P-113]Eribum and its complex defects in Silicon
Hyungwoo Lee1, 〇Minseok Choi1,2 (1. Inha Univ. (Korea), 2. Inst. of Quantum Sci., Inha Univ. (Korea))
Er-doped silicon is promising for quantum technology due to long spin coherence and wafer-scale fabrication. However, low quantum efficiency arises from Er-defect complexes and precipitates. Using density functional calculations, we investigate defect formation, migration, and their relation to experimental observations.