[Th-P1-C] Electron spin properties in 2D materials

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[Th-P1-C-05] Te composition dependence of superconducting diode effectin FeSe_1−xTe_x/FeTe heterostructure devices

〇Kenshin Inamura¹, Yusuke Kobayashi¹, Kaito Arizono¹, Junichi Shiogai^1,2, Tsutomu Nojima³, Jobu Matsuno^1,2 (1. Dept. Phys., Univ. Osaka (Japan), 2. OTRI Spin., Univ. Osaka (Japan), 3. IMR, Univ. Tohoku (Japan))

We investigated Te-composition dependence in FeSe1−xTex/FeTe heterostructure devices by measuring Tc, critical current density, and superconducting diode efficiency below Tc for x = 0.5–0.7. The study identified x = 0.6 as optimal, achieving both the highest Jc and 18% rectification at 5 T.