[Th-P1-E] Topological Phases and Phase Transitions

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[Th-P1-E-02] Surface State Dominated Transport in HgTe Topological Insulator Devices

〇Maximilian Hofer^1,2, Christopher Fuchs^1,2, Lena Fürst^1,2, Tobias Kießling^1,2, Wouter Beugeling^1,2, Steffen Schreyeck^1,2, Hartmut Buhmann^1,2, Laurens W. Molenkamp^1,2 (1. Inst. for Topological Insulators, Univ. of Würzburg (Germany), 2. Inst. of Physics (EP3), Univ. of Würzburg (Germany))

We study strained HgTe films (26–110 nm) showing surface-state dominated transport. Experimental results quantitatively agree with eight-orbital k·p theory. We map the parameter regimes for topological surface versus bulk-mediated transport as a function of layer thickness and carrier density.