[Th-P2-B] Emerging phenomena in 2D materials

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[Th-P2-B-03] Forming Nanoscale Defect Array from 2D Ferroelectricity in Twisted Hexagonal Boron Nitride

〇Jacques Hawecker¹, Ka Lun Michael Man¹, Prajakta Kokate¹, Marisa Hocking², Will Millsaps², Filchito Renee G. Bagsican¹, Nanami Tomoda¹, Harley Suchiang¹, Xing Zhu¹, Amrita Mitra¹, Kenji Watanabe³, Takashi Taniguchi⁴, Julien Madéo¹, Andrew J. Mannix², Keshav M. Dani¹ (1. 1 Femtosecond Spectroscopy Unit, Okinawa Institute of Science and Technology Graduate University (Japan), 2. Department of Materials Science and Engineering; Stanford University (USA), 3. Research Center for Electronic and Optical Materials, National Institute for Materials Science (Japan), 4. Center for Materials Nanoarchitectonics, National Institute for Materials Science (Japan))

Using Photoemission microscopy, we map the in-gap electronic energetics and spatial structure of ferroelectric twisted hexagonal Boron Nitride, revealing defects and domain wall states. Surprisingly, we find that for small moiré period, defects are preferentially located at the ferroelectric domain wall triple intersections.