[Th-P2-F] Semiconductor Cryo-Technology and Novel Qubits

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[Th-P2-F-02] Ge/GeSn Quantum Well MOSFETs for Cryogenic Applications

Jingxuan Sun¹, Yi Han², Xue Bai¹, Patreek Kaul¹, Yannik Junk¹, Jiayuan Zhang¹, Yu-Tsu Liao¹, Yu-Chen Chang³, Anjana Rajan¹, Joachim Knoch³, Dan Buca¹, Qing-Tai Zhao¹, 〇Detlev Grützmacher¹ (1. Forschungszentrum Jülich (Germany), 2. Shanghai Jiao Tong University (China), 3. RWTH Aachen University (Germany))

Cryo-CMOS is beneficial for energy efficient high-performance computing improving carrier mobility and subthreshold swing. GeSn alloys exhibit low m_e* and m_h*. Ge/Ge_0.88Sn_0.12 QW MOSFETs exhibit a continuously decreasing SS, reaching 15 mV/dec (5K), the lowest reported for Ge- p-MOSFETs. GeSn QW MOSFET are promising for cryogenic applications.