[Th-P2-G] Qunatum dots & related technologies

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[Th-P2-G-03] Manipulation of Near-Surface Single Donor Charge States with Nano-Scale Dynamic Electron Doping by Tunneling and Secondary Generation

〇Kiyoshi Kanisawa¹ (1. NTT Basic Res. Labs. (Japan))

Cleaved n-type InAs(110) surface was characterized using the ultra-high vacuum scanning tunneling microscope at 78 K. It is demonstrated that an amphoteric nature of single donor is controlled with tunnel electron induced nano-scale dynamic electron doping driven by the Fröhlich interaction and the impact-ionization.