Presentation Information
[Th-P2-G-04]Surfactant Effects in III-V Epitaxy and Its Device Implications
〇Ayse Ozcan-Atar1, Camille Barbier1, Agnieszka Gocalinska1, Enrica Mura1, Pawel Piotr Michalowski2, Adrianna Rejmer2, Brian Corbett1, Frank H Peters1, Emanuele Pelucchi1 (1. Tyndall National Institute, University College Cork (Ireland), 2. Łukasiewicz Research Network, Institute of Microelectronics and Photonics (Poland))
We present new insights into the surfactant behavior of Sb and Zn during metal-organic-vapor-phase epitaxy (MOVPE), demonstrating a systematic and previously unreported results to enhance the effective p-type (Zn) doping of III-V alloys and its direct implications for device applications.