Presentation Information
[Th-P2-H-04]Upconversion Photoluminescence from Dark Excitons via Resonant Exciton-Exciton Annihilation in Few-Layer Transition Metal Dichalcogenides
〇Ping-Yuan Lo1, Yi-Hsun Chen2,3, Shun-Jen Cheng1, Shao-Yu Chen3,4,5 (1. Department of Electrophysics, National Yang Ming Chiao Tung Univ. (Taiwan), 2. School of Physics and Astronomy, Monash Univ. (Australia), 3. Australian Res. Council centre of Excellence in Future Low-Energy Electronics Technologies, Monash Univ. (Australia), 4. Center for Condensed Matter Sci., National Taiwan Univ. (Taiwan), 5. Center of Atomic Initiative for New Material, National Taiwan Univ. (Taiwan))
We discover the upconversion photoluminescence via resonant exciton-exciton annihilation (EEA) from dark excitons in indirect bandgap few-layer transition metal dichalcogenides. Our findings show that the EEA mechanism brightens dark excitons in 2D semiconductors and reposition the roles of the EEA.
