[Tu-P] Quantum technologies: semiconductor qubits and applications, cryo-CMOS technologies

[Tu-P-114] Towards a Single Electron Current Source in 300mm MOS Silicon

〇Nathan Johnson¹, Stefan Kubicek², Julien Jussot², Yann Canvel², Kristiaan de Greve², Fernando Gonzalez-Zalba³, Ross Leon³, John Morton^3,1 (1. University College London (UK), 2. imec (Belgium), 3. Quantum Motion Technologies Ltd (UK))

We present measurements of a high-accuracy single-electron current source developed in a 300mm MOS process. We detail the device's mechanism of operation to understand its accuracy and demonstrate a method to map the potential profile of the QD and barriers.