Presentation Information
[Tu-P-115]Cryogenic Characterization of SiGe Heterojunction Bipolar Transistors and Application to Silicon Qubit Readout
〇Takeshi Fukuda1, Takafumi Toshimitsu1, Shunsuke Ota1, Raisei Mizokuchi1, Itaru Yanagi2, Toshiyuki Mine2, Ryuta Tsuchiya2, Digh Hisamoto2, Hiroyuki Mizuno2, Tetsuo Kodera1 (1. Department of Electrical and Electronic Engineering, Institute of Science Tokyo (Japan), 2. Research and Development Group, Hitachi, Ltd. (Japan))
Cryogenic characteristics of SiGe HBTs were evaluated for MHz-range current readout of silicon quantum dots. Significant device variation was observed at low temperatures. Integration with quantum dot devices demonstrated stable charge transport detection, highlighting their potential for scalable spin qubit readout.