Presentation Information
[Tu-P-115]Cryogenic Characterization of SiGe Heterojunction Bipolar Transistors and Application to Silicon Qubit Readout
〇Takeshi Fukuda1, Takafumi Toshimitsu1, Shunsuke Ota1, Raisei Mizokuchi1, Itaru Yanagi2, Toshiyuki Mine2, Ryuta Tsuchiya2, Digh Hisamoto2, Hiroyuki Mizuno2, Tetsuo Kodera1 (1. Department of Electrical and Electronic Engineering, Institute of Science Tokyo (Japan), 2. Research and Development Group, Hitachi, Ltd. (Japan))