[Tu-P] Quantum technologies: semiconductor qubits and applications, cryo-CMOS technologies

[Tu-P-116] Simulation of Cryogenic Transport in GAA Nanosheet FETs

〇Xi-Jun Fang¹, Yuh-Renn Wu¹ (1. National Taiwan University (Taiwan))

Monte Carlo and DDCC TCAD simulations examine cryogenic transport in GAA nanosheet FETs from 300-10 K. Results highlight mobility enhancement, scattering mechanisms, and dielectric effects, providing insights for cryo CMOS integration and quantum computing device applications.