[Tu-P] Quantum technologies: semiconductor qubits and applications, cryo-CMOS technologies

[Tu-P-118] Optically Programmable and Erasable Cryogenic Flash Memory on an Undoped Si/SiGe Heterostructure

〇Uditendu Mukhopadhyay^1,2, Siddarth Rastogi¹, Sounak Samanta¹, Varsha Jangir¹, Lokesh Patra¹, Kanishk Modi¹, Arnav Jain¹, Suddhasatta Mahapatra^1,2 (1. Department of Physics, Indian Inst. of Tech. Bombay (India), 2. Centre of Excellence in Quantum Info., Computing, Sci. & Tech. (CoE QuICST), Indian Inst. of Tech. Bombay (India))

We demonstrate optically-programmable cryogenic memory using undoped Si/SiGe HFETs, where LED-illumination and gate-bias tune the threshold voltage (−4 V to 4 V). The device exhibits binary and multibit operation with >10³ endurance cycles and >10⁴ s retention at 1.5 K.