[Tu-P] Quantum technologies: semiconductor qubits and applications, cryo-CMOS technologies

[Tu-P-119] Characterization of sGe/SiGe Quantum Capacitance for Parametric Amplification

〇Bo Jiang¹, Yuto Arakawa¹, Chutian Wen¹, Ryutaro Matsuoka¹, Mizokuchi Raisei¹, Jean Michel Hartmann², Pierre Andre Mortemousque², Silvano De Franceschi³, Tetsuo Kodera¹ (1. Institute of Science Tokyo (Japan), 2. Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France (France), 3. Université Grenoble Alpes, CEA, Grenoble INP, IRIG-Pheliqs, Grenoble, France (France))

We propose a Ge-based on-chip parametric amplifier using gate-dependent quantum capacitance measured via reflectometry. Nonlinear capacitance is observed and analyzed, indicating potential for amplification under strong magnetic fields, relevant for low-noise qubit readout.