Presentation Information
[Tu-P-123]Illumination-Induced Charge Response in Gate-Defined GaAs Quantum Dots in an Undoped Quantum Well
〇Genki Fukuda1, Ryota Hayashi1, Takafumi Fujita1, Rio Fukai1, Makoto Kohda2, Junsaku Nitta2, Julian Ritzmann3, Arne Ludwig3, Andreas D. Wieck3, Akira Oiwa1 (1. Osaka Univ. (Japan), 2. Tohoku Univ. (Japan), 3. Ruhr Univ. Bochum (Germany))
We investigate illumination-induced charge responses in undoped GaAs/AlGaAs gate-defined quantum dots. Real-time charge sensing and Coulomb-peak tracking reveal pulse-like signals, step-like changes, and drift under illumination, providing insight into photoinduced potential fluctuations relevant to photon-to-spin interfaces.