Presentation Information
[Tu-P-45]Optical and Electrical Evaluation of Excimer-Light-Induced
Surface Electric Fields in GaAs
〇Haruto Monda1, Kazuki Ueda1, Takayuki Hasegawa1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Toshihiko Maemoto1 (1. Osaka Inst. of Tech. (Japan), 2. Semiconductor Related Group, Marketing Management Division, Ushio Inc. (Japan))
Deep-ultraviolet (172 nm) excimer irradiation modifies GaAs surfaces, altering Fermi level pinning and band bending. THz emission and Schottky measurements indicate N2-induced Ga-rich surfaces enhance electric fields, while oxidation increases interface states and induces MIS-like behavior.