[Tu-P] 2D materials

[Tu-P-57] A New Architecture for Graphite-Gate-Defined Quantum Devices in Bilayer Graphene

〇Francesco Blanda¹, Aurin Strathmann¹, Fabrizio Volante¹, Kenji Watanabe², Takashi Taniguchi², Klaus Ensslin³, Thomas Ihn³, Andrea Hofmann^1,4 (1. Univ. of Basel (Switzerland), 2. Advanced Material Lab., National Inst. for material Sci. (Japan), 3. Solid states physics lab., ETH Zürich (Switzerland), 4. Swiss Nanoscience Inst. (Switzerland))

We introduce a new architecture for dual-gated, high-quality bilayer graphene devices with long phase coherence lengths and clean, uniform band gaps. It enables new device geometries, such as a graphite-gate-defined Hall bar, which allows us to characterize the properties of the electrostatic edges.