Presentation Information
[Tu-P1-D-04]Large anomalous Nernst effect in room-temperature ferromagnetic semiconductor (In,Fe)Sb
Pham Nam Hai1, Kota Ejiri1, Li Wentao1, 〇Shuzo Oeda1, Yun Jaeyeon2, Masaaki Tanaka2 (1. Science Tokyo (Japan), 2. The Univ. of Tokyo (Japan))
We observe the anomalous Nernst effect (ANE) in an n-type (In,Fe)Sb ferromagnetic semiconductor (FMS) thin film with high TC ~ 460 K, which shows a large transerve thermopower = –3.2 μV/K at 332 K and –1.3 μV/K at 447 K. The ANE in (In,Fe)Sb at room temperature is remarkebly large and comparable to those observed in Mn3Sn and Co2MnGa topological materials.
