[Tu-P1-F] Emerging Solid-State Quantum Emitters and Photonic Devices

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[Tu-P1-F-04] Deterministic depth-controlled growth of room-temperature quantum emitters in GaN

〇Katie Eggleton¹, Joseph Cannon¹, Sam Bishop¹, John Hadden¹, Chunyu Zhao², Menno Kappers², Rachel Oliver², Anthony Bennett¹ (1. Cardiff University (UK), 2. University of Cambridge (UK))

We demonstrate depth-controlled formation of GaN quantum emitters in GaN-on-silicon structures via silane-assisted MOVPE growth. The emitters exhibit stable, room-temperature single-photon emission, offering a scalable route to the integration of GaN quantum emitters with silicon technologies.