[Tu-P2-B] Tunneling phenomena in 2D materials

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[Tu-P2-B-01] Enhanced Charge Carrier Transport in WSe₂ Field-Effect Transistors via Monolayer MoS₂ Tunneling Contacts

〇Amirhossein Nazarian-Firouzabadi¹, Inayat Uddin¹, Nhat Anh Nguyen Phan¹, Muhammad Atif Khan¹, Gil-Ho Kim^1,2 (1. Department of Electrical and Computer Engineering, Suwon 16419, Sungkyunkwan University (SKKU) (Korea), 2. Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419 (Korea))

Monolayer MoS₂ tunneling contacts are introduced to improve charge injection in WSe₂ field-effect transistors. The atomically thin MoS₂ layer suppresses Fermi-level pinning and enables carrier injection, resulting in significantly reduced contact resistance and enhanced device performance compared with conventional surface contacts.