[Tu-P2-B] Tunneling phenomena in 2D materials

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[Tu-P2-B-02] Strain Induced Near Room Temperature Negative Differential Conductance in the MoS₂/h-BN/Graphite Tunneling Diode

〇Chengjie ZHOU¹, Siyan Liu¹, Chun Yu Wan¹, Yifan Jiang¹, Sihong Xu¹, Zijing Jin¹, Chen Ma¹, Ziyun Li¹, Hui Li², Shiming Lei¹, Junwei Liu¹, Jiannong Wang¹ (1. The Hong Kong University of Science and Technology (Hong Kong), 2. Anhui University (China))

We demonstrate an angle-insensitive, gate-tunable quantum well resonant tunneling diode showing near room temperature negative differential conductance. Strain induced pseudo magnetic fields from interlayer nanobubbles in FLG produce robust NDC, offering a scalable path for vdW based low power electronics.