[Tu-P2-B] Tunneling phenomena in 2D materials

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[Tu-P2-B-03] Mapping the Fractional and Integer Correlated States in Twisted Bilayer MoS2 by Quantum Well Resonant Tunneling Spectroscopy

〇Chengjie ZHOU¹, Jinxin Hu¹, Sihong Xu¹, Xilai Liu¹, Zijing Jin¹, Hui Li², Kam-Tuen Law¹, Jiannong Wang¹ (1. The Hong Kong University of Science and Technology (Hong Kong), 2. Anhui University (China))

Using a gate-tunable quantum well resonant tunneling diode, we observe integer v = 1 and fractional v = 3/4 insulating states in near AB-stacked twisted bilayer MoS2, offering a robust platform for probing correlated physics.