[Tu-P2-B] Tunneling phenomena in 2D materials

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[Tu-P2-B-04] Electrically Modulated Light-emitting Device Driven by Resonant
and Antiresonant Tunneling Between Cr₂Ge₂Te₆ Electrodes

〇Natalia Zawadzka¹, Kristina Vaklinova², Tomasz Woźniak⁵, Mihai Ionut Sturza³, Holger Kohlmann³, Kenji Watanabe⁴, Takashi Taniguchi⁴, Adam Babiński¹, Maciej Koperski², Maciej Roman Molas¹ (1. Univ. of Warsaw (Poland), 2. National Univ. of Singapore (Singapore), 3. Leipzig Univ. (Germany), 4. National Inst. for Materials Science (Japan), 5. Wrocław Univ. of Sci. and Tech. (Poland))

We investigate bipolar vertical tunneling junctions using Cr₂Ge₂Te₆ electrodes, hBN as a tunneling barriers, and monolayer WSe₂ as a luminescent medium. Electroluminescence reveals non-monotonic intensity evolution with applied voltage, explained by the formation of resonant and antiresonant tunneling conditions.