[Tu-P2-D] Control of spin state and device application

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[Tu-P2-D-02] Role of a Ferromagnetic Semiconductor LaMnO₃ Buffer Layerin (La,Sr)MnO₃-based Spin-Valve Devices

〇Aoi Nakamura¹, Tatsuro Endo¹, Munetoshi Seki^1,2, Hitoshi Tabata^1,2, Masaaki Tanaka^1,2,3, Shinobu Ohya^1,2,3 (1. Department of Electrical Engineering and Info. Systems, The Univ. of Tokyo (Japan), 2. Center for Spintronics Res. Network (CSRN), The Univ. of Tokyo (Japan), 3. Inst. for Nano Quantum Info. Electronics (NanoQuine), The Univ. of Tokyo (Japan))

We demonstrate a spin MOSFET based on (La_2/3,Sr_1/3)MnO₃ with a ferromagnetic semiconductor LaMnO₃ buffer layer on SrTiO₃, achieving a large magnetoresistance of ~10%. The buffer layer suppresses dead layer formation, thereby enhancing the performance and functionality of oxide-based spin devices.