Presentation Information

[Tu-P2-D-02]Role of a Ferromagnetic Semiconductor LaMnO3 Buffer Layerin (La,Sr)MnO3-based Spin-Valve Devices

〇Aoi Nakamura1, Tatsuro Endo1, Munetoshi Seki1,2, Hitoshi Tabata1,2, Masaaki Tanaka1,2,3, Shinobu Ohya1,2,3 (1. Department of Electrical Engineering and Info. Systems, The Univ. of Tokyo (Japan), 2. Center for Spintronics Res. Network (CSRN), The Univ. of Tokyo (Japan), 3. Inst. for Nano Quantum Info. Electronics (NanoQuine), The Univ. of Tokyo (Japan))

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