[Tu-P2-E] THz/MIR materials and devices

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[Tu-P2-E-04] Demonstration of MIR detector using sputter-fabricated BiSb topological insulator film

〇Hajime Nishiyama^1,2, Pham Nam Hai², Yukio Kawano^1,3 (1. Chuo university (Japan), 2. Science Tokyo (Japan), 3. NII (Japan))

We demonstrate a mid-infrared (MIR) photothermoelectric (PTE) detector based on a Bi90Sb10 thin film, a topological insulator with strong MIR absorption and a high Seebeck coefficient. We observed a large PTE response of 170 µV with an improved detectivity D* of 1.1*10^5 cm (Hz)^0.5/W for a BiSb-based PTE device on a Kapton flexible substrate.