[We-A2-F] Germanium Quantum Technology

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[We-A2-F-03] Restoring Intrinsic Transport by Eliminating Dielectric Interfaces in Ultra-Clean Quantum Materials

Maksym MYRONOV¹, P. Waldron², W. Jiang², 〇Sergei Studenikin² (1. The University of Warwick (UK), 2. National Research Council of Canada (Canada))

Dielectric-free Schottky gating of undoped compressively strained Ge quantum wells restores intrinsic low-density transport by eliminating dielectric-induced disorder and interface states. Gated transport devices exhibit zero hysteresis, ultra-low leakage and a record-low percolation density.