[We-A2-F] Germanium Quantum Technology

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[We-A2-F-05] Transformative magnetic field sensing with scalable quantum technology based on ultra-low carrier density holes in Compressively Strained Germanium on Silicon

〇Maksym Myronov¹, Parinaz Tabrizian¹, Behzad Jazizadeh¹, Weihong Jiang², Sergei Studenikin² (1. University of Warwick (UK), 2. National Research Council of Canada (Canada))

Ultra-low-density (p ≈ 1×10¹⁰ cm^-2) 2DHGs in compressively strained germanium on silicon (cs-GoS) enable enhanced Hall voltage sensitivity, allowing detection of ~60 pV at 10 nT. Quantum Hall plateaux (ν = 3) provide intrinsic self-calibration via resistance quantisation.