[We-P] 2D materials

[We-P-42] Proximity Doping and Lithographically Controlled Liquid Metal Intercalation in Epitaxial Graphene for Quantum Transport Applications

Marc Bothe¹, Davin Höllmann¹, Johannes Christian Bayer¹, Stefan Wundrack^1,2, Andrey Bakin², Rainer Stosch¹, Hans Werner Schumacher¹, 〇Teresa Marie Tschirner¹ (1. Physikalisch-Technische Bundesanstalt Braunschweig (Germany), 2. Inst. of Semiconductor Tech., Tech. Univ. Braunschweig (Germany))

Epitaxial graphene on SiC grown by PASG enables controlled carrier density via molecular doping, and LiMIT metal intercalation, supporting superconducting and topological phases. Combined with dielectric engineering, these advances deliver homogeneous doping and high mobility for scalable quantum metrology.