[We-P] 2D materials

[We-P-46] Tuning Epitaxial Graphene through Van der Waals Heterostructures

〇Marc Bothe¹, Davin Höllmann¹, Stefan Wundrack¹, Keda Jin², Johannes Christian Bayer¹, Sandhya Anchamkudy², Hans Werner Schumacher¹, Felix Lüpke², Teresa Marie Tschirner¹ (1. Physikalisch-Technische Bundesanstalt (Germany), 2. Forschungszentrum Jülich (Germany))

Epitaxial graphene (EG) on SiC is a promising candidate for quantum Hall resistance standards. We tune its electronic properties through proximity effects by stacking exfoliated 2D materials (e.g. hBN, MoS₂, WSe₂, NbSe₂) on top of EG Hall bars and characterizing the devices via magneto-transport measurements.