[We-P] 2D materials

[We-P-49] Electrostatically Defined Quantum Dots in MoS2 Heterostructures

〇Yunsang Noh¹, Seungwoo Lee¹, Minjun Park¹, Sung Jin An², Takashi Taniguchi³, Kenji Watanabe³, Minkyung Jung², Youngwook Kim¹ (1. Daegu Gyeongbuk Institute of Science and Technology (DGIST) (Korea), 2. DGIST Research Institute (Korea), 3. National Institute for Material Science (Japan))

MoS₂ quantum dot devices were fabricated in a van der Waals heterostructure with graphite bottom and finger top gates. Sb contacts yield near-ohmic transport. In the quantum dot geometry, nonlinear transport features and gate-dependent conductance modulations are observed.