[We-P] Spintronics, spin-related phenomena, novel spintronics materials and devices

[We-P-56] Thickness Dependence of Superconducting Diode Efficiency in Fe(Se,Te)/FeTe Thin-Film Heterostructure Devices

〇Kaito - Arizono¹, Kenshin - Inamura¹, Junichi - Shiogai^1,2, Tsutomu - Nojima³, Kouta - Kondou², Jobu - Matsuno^1,2 (1. Dep. of Phys., The Univ. of Osaka (Japan), 2. OTRI-Spin, The Univ. of Osaka (Japan), 3. IMR, Tohoku University (Japan))

We investigate Fe(Se,Te)-layer thickness (t_FST) dependence of superconducting diode effect, the nonreciprocal response of the critical current, and perform the time evolution measurement of the rectification characteristics using the device with the optimal thickness.