[We-P] Optical properties of quantum dots and nanocrystals, optoelectronics

[We-P-76] Optical Study of Bi/GaAsBi/(Al,Ga)As Quantum Dots-in-a-Well Structures

〇Evelina Dudutiene¹, Justas Zuvelis^1,2, Aiste Staupiene¹, Aivaras Spokas¹, Andrea Zelioli¹, Martynas Skapas¹, Augustas Vaitkevicius^1,2, Piotr Wojnar³, Bronislovas Cechavicius¹, Aurimas Cerskus¹, Renata Butkute¹ (1. State Res. Inst. Center for Physical Sci. and Tech. (Lithuania), 2. Vilnius Univ., Faculty of Physics, Inst. of Photonics and Nanotech. (Lithuania), 3. Inst. of Physics, Polish Academy of Sci. (Poland))

GaAsBi heterostructures annealed above 600 °C form Bi quantum dots with near-infrared emission, yet their optical properties remain largely unexplored. Here, we demonstrate annealing-induced Bi QDs with a robust optical response, highlighting their promise for NIR optoelectronic applications.