Presentation Information

1:50 PM - 2:10 PM JST(4:50 AM - 5:10 AM UTC)

[Th-2B-02]High electric field detection in a SiC power device by silicon vacancy-based quantum sensor

*Yuichi Yamazaki¹, Akira Kiyoi², Naoyuki Kawabata², Yuki Watanabe², Ryosuke Akashi¹, Shunsuke Daimon¹, Nobumasa Miyawaki¹, Yu-ichiro Matsushita^1,3,4, Makoto Kohda^1,5,6, Takeshi Ohshima^1,5 (1. QST (Japan), 2. Mitsubishi Electric Corporation (Japan), 3. The University of Tokyo (Japan), 4. Quemix Inc. (Japan), 5. Tohoku University (Japan), 6. University of Washington (USA))

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